Related Experiment Video
Updated: Feb 14, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Doping Nitrogen in InGaZnO Thin Film Transistor with Double Layer Channel Structure
1Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center National Cheng Kung University, Tainan 70101, Taiwan.
Abstract:
This paper presents the electrical characteristics of doping nitrogen in an amorphous InGaZnO thin film transistor. The IGZO:N film, which acted as a channel layer, was deposited using RF sputtering with a nitrogen and argon gas mixture at room temperature. The optimized parameters of the IGZO:N/IGZO TFT are as follows: threshold voltage is 0.5 V, field effect mobility is 14.34 cm2V-1S-1. The on/off current ratio is 106 and subthreshold swing is 1.48 V/decade. The positive gate bias stress stability of InGaZnO doping with nitrogen shows improvement compared to doping with oxygen.
Related Concept Videos
The Nitrogen Cycle
Field Effect Transistor
Bipolar Junction Transistor
Overview of Nitrogen Metabolism
The largest pool of nitrogen available in the terrestrial ecosystem is gaseous nitrogen (N2) from the air, but this...
Inorganic Nitrogen Assimilation
Ion Channels
Ion channels are specialized integral membrane proteins on the plasma membrane that allow...

