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Updated: Feb 14, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Deposition of Tin Oxide Thin Films by Successive Ionic Layer Adsorption Reaction Method and Its Characterization
Shipra Raj1, Sharad Kumar2, Suneel Kumar Srivastava2
1Department of Chemistry, Birla Institute of Technology, Mesra, Ranchi 835215, Jharkand, India.
Abstract:
Tin oxide thin films were uniformly deposited by successive ionic layer adsorption reaction (SILAR) method on glass substrates using ethylene diamine as a complexing agent. The proper annealing treatment in air converts as-deposited amorphous films into crystalline and removes defects, reducing strain in the crystal lattice. The films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), Atomic Force Microscopy (AFM), Fourier Transform Infrared (FTIR) spectroscopy. The film shows good optical transparency in the range of 200-1000 nm wavelength and electrical resistivity decreases upon annealing.
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