2D Effective Electron Mass at the Fermi Level in Accumulation and Inversion Layers of MOSFET Nano Devices

Area of Science:

• Semiconductor Physics
• Materials Science
• Nanoelectronics

Background:

• Understanding carrier behavior in nanoscale devices is crucial for advanced electronics.
• The Fermi Level Mass (FLM) is a key parameter influencing device performance.
• Existing models often simplify the complex physics in novel materials.

Purpose of the Study:

• To investigate the 2D Fermi Level Mass (FLM) in accumulation and inversion layers of various nano MOSFET materials.
• To formulate 2D carrier dispersion laws using the $$$$ $$$$ formalism.
• To analyze the dependence of FLM on material properties, sub-band index, and electric fields.

Main Methods:

• Formulation of 2D carrier dispersion laws based on the $$$$ $$$$ formalism.
• Consideration of energy band constants for specific materials (e.g., Cd3As2, InSb, Hg1-xCdxTe).
• Analysis of FLM in accumulation and inversion layers under varying surface electric fields and scattering potentials.

Main Results:

• The FLM exhibits dependence on the sub-band index for materials like Cd3As2 and CdGeAs2.
• FLM is influenced by scattering potential across all investigated materials.
• The FLM changes with increasing surface electric field.
• Observed FLM within the band gap suggests the role of heavy doping.

Conclusions:

• The FLM in nano MOSFETs is sensitive to sub-band index and scattering effects, particularly in specific 2D systems.
• Surface electric field significantly modulates the FLM.
• The presence of FLM in the band gap highlights the importance of considering heavy doping effects in these materials.