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Updated: Feb 14, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Complementary metal-oxide semiconductor compatible source of single photons at near-visible wavelengths
Abstract:
We demonstrate on-chip generation of correlated pairs of photons in the near-visible spectrum using a CMOS compatible plasma-enhanced chemical vapor deposition silicon nitride photonic device. Photons are generated via spontaneous four wave mixing enhanced by a ring resonator with high intrinsic quality Q-factor of 3,20,000, resulting in a generation rate of 950,000 pairsmW. The high brightness of this source offers the opportunity to expand photonic quantum technologies over a broad wavelength range and provides a path to develop fully integrated quantum chips working at room temperature.
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