Effect of Self-Heating on the Electrical Characteristics of Strained Si FinFETs

Self-heating effect (SHE) on the electrical characteristics of fin field-effect transistors (FinFETs) model with a strained Si channel was investigated by using a three-dimensional simulation tool. Strain was applied from 0.1 to 2.0 GPa by changing Si mole fraction of the Si1-xGex. Simulation results showed that the drain current of the strained Si FinFETs increased with increasing applied strain from 0.5 to 2.0 GPa. The drain current of the FinFETs under strain of 2.0 GPa increased up to 20.59 μA. While the drain current of the FinFETs without a SHE increased with increasing strain, the increase of the drain current generating from the strain interrupted the applications for the practical device operation due to a large SHE. The drain current decreased due to the increased scattering resulting from the increased device temperature with an increase in the SHE.