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Ultra-Broadband Optical Gain in III-Nitride Digital Alloys
Wei Sun1, Chee-Keong Tan2,3, Jonathan J Wierer2
1Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA, 18015, USA. wes212@lehigh.edu.
Abstract:
A novel III-Nitride digital alloy (DA) with ultra-broadband optical gain is proposed. Numerical analysis shows a 50-period InN/GaN DA yields minibands that are densely quantized by numerous confined states. Interband transitions between the conduction and valence minibands create ultra-broadband optical gain spectra with bandwidths up to ~1 μm that can be tuned from the red to infrared. In addition, the ultra-broadband optical gain, bandwidth, and spectral coverage of the III-Nitride DA is very sensitive to layer thickness and other structural design parameters. This study shows the promising potential of the III-Nitride DAs with tunable ultra-broadband interband optical gain for use in semiconductor optical amplifiers and future III-Nitride photonic integration applications.
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