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Updated: Feb 14, 2026
Patterning Cells on Optically Transparent Indium Tin Oxide Electrodes
Published on: August 20, 2007
Electronic Level Alignment at an Indium Tin Oxide/PbI2 Interface and Its Applications for Organic Electronic Devices
Qiaogang Song1,2, Tong Lin1,2, Xue Sun1,2
1State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , P. R. China.
Abstract:
The electronic level alignment at the indium tin oxide (ITO)/PbI2 interface is investigated by an ultraviolet photoelectron spectroscopy. An n-type conductivity property is found for PbI2 as well as a downward shift energy level at the ITO/PbI2 interface. These indicate that PbI2 can be used as an anode buffer layer for organic electronic devices. The power conversion efficiency of the organic solar cell based on tetraphenyldibenzoperiflanthene/C70 planar heterojunction is dramatically increased from 1.05 to 3.82%. Meanwhile, the thermally activated delayed fluorescence organic light-emitting diode based on 4,4',4″-tri( N-carbazolyl)triphenylamine-((1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl))tris(diphenylphosphine oxide) shows a significantly reduced turn-on voltage and enhanced power efficiency from 6.26 to 18.60 lm/W. The improved performance is attributed to the high hole injection/extraction efficiency at the ITO/PbI2 interface. Besides, the near-infrared (NIR) absorption of lead phthalocyanine (PbPc)-based NIR organic photodetector (NIR-OPD) is dramatically increased, indicating that the PbI2 layer can also be used as a template layer for the growth of the triclinic phase of PbPc. As a result, the optimized device shows an external quantum efficiency of 26.7% and a detectivity of 9.96 × 1011 jones at 900 nm, which are among the highest ones reported for organic NIR-OPDs.
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