Related Experiment Video
Updated: Feb 14, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
Study on the inversion of doped concentration induced by millisecond pulsed laser irradiation silicon-based avalanche
Abstract:
In this paper, an experimental study of silicon-based avalanche photodiode (Si-APD) with millisecond pulse laser irradiation was carried out, and the C-V curve of Si-APD was obtained by using a semiconductor analyzer. Based on the single-side abrupt junction character of n+p, combined with the corresponding theoretical derivation, the doping concentration varying with the axial depth of damaged Si-APD was obtained by inverse computation. The lattice dislocation and junction reduction were the fundamental causes of the reduced doping concentration. The research results provide a new method for the study of the internal doping concentration for detectors with millisecond pulse laser damage.
Related Concept Videos
Pulse
The pulse serves as a clinical...
Pulse
Pulse Rate and its Significance
Pulse rate, often measured in beats per minute (bpm), reflects the heart rate (HR), which is influenced by numerous factors such as stress, physical activity, and hormonal changes. A normal resting adult pulse rate falls...
Inverse Trigonometric Functions
The Integrated Rate Law: The Dependence of Concentration on Time
Inverse Hyperbolic Functions and Their Derivatives
Concentration Cells
Consider the following voltaic cell:

