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High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
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Phonon transport in Janus monolayer MoSSe: a first-principles study
1School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China. sandongyuwang@163.com.
Physical Chemistry Chemical Physics : PCCP
|February 28, 2018
Summary
Janus Molybdenum Diselenide Sulfide (MoSSe) monolayers exhibit lower lattice thermal conductivity than MoS2 due to reduced phonon velocities and lifetimes. This finding is crucial for thermal management in nanoelectronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Transition Metal Dichalcogenide (TMD) monolayers possess unique physical properties, driving extensive research.
- Janus TMD monolayer MoSSe, featuring a S-Mo-Se structure, has been successfully synthesized.
- Understanding thermal transport in these novel materials is critical for device applications.
Purpose of the Study:
- To systematically investigate the phonon transport and lattice thermal conductivity (κL) in MoSSe monolayers.
- To compare the thermal properties of MoSSe with MoS2 and MoSe2 monolayers.
- To explore the influence of isotope scattering and size effects on κL.
Main Methods:
- First-principles calculations were employed to study MoSSe monolayers.
- The linearized phonon Boltzmann equation within the single-mode relaxation time approximation (RTA) was utilized.
- Phonon group velocities, lifetimes, and elastic properties were analyzed.
Main Results:
- MoSSe monolayers exhibit significantly lower κL than MoS2 and higher κL than MoSe2.
- The thermal sheet conductance of MoSSe monolayers is 342.50 W K⁻¹ at room temperature.
- Reduced phonon group velocities and shorter lifetimes in MoSSe contribute to lower κL compared to MoS2.
Conclusions:
- The thermal conductivity of MoSSe monolayers is governed by phonon transport dynamics.
- Isotope scattering reduces κL by 5.8%, while size effects can halve κL at ~110 nm characteristic length.
- Findings offer insights for thermal management in MoSSe for applications in thermoelectrics, thermal circuits, and nanoelectronics.
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