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Scanning microwave microscopy applied to semiconducting GaAs structures.

Arne Buchter1, Johannes Hoffmann1, Alexandra Delvallée2

  • 1Federal Institute of Metrology METAS, Lindenweg 50, 3003 Bern-Wabern, Switzerland.

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A new calibration algorithm for scanning microwave microscopes (SMMs) accurately measures carrier densities in semiconductors. This versatile method is independent of instrument and frequency, validated up to 27.5 GHz.

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Area of Science:

  • Materials Science
  • Physics
  • Electrical Engineering

Background:

  • Scanning Microwave Microscopy (SMM) enables nanoscale material characterization.
  • Accurate quantitative analysis requires robust calibration methods.
  • Previous SMM calibration techniques lacked versatility and independence.

Purpose of the Study:

  • To develop and validate a novel, instrument- and frequency-independent calibration algorithm for SMM.
  • To extract quantitative carrier densities from semiconductor samples using SMM.
  • To demonstrate the algorithm's applicability across different SMM setups and frequencies.

Main Methods:

  • A one-port vector network analyzer (VNA) calibration algorithm was developed for SMM.
  • The algorithm was applied to an n-doped GaAs multilayer sample.
  • Experimental data were acquired using two distinct SMM setups (cantilever- and tuning fork-based) up to 27.5 GHz.
  • SMM results were benchmarked against Secondary Ion Mass Spectrometry (SIMS).

Main Results:

  • Quantitative carrier densities were successfully extracted from the GaAs sample.
  • The calibration algorithm demonstrated robustness and versatility across different SMM configurations.
  • The algorithm proved independent of specific instrument parameters and operating frequency.
  • SMM data successfully distinguished between p- and n-doped layers in a GaAs p-n junction.

Conclusions:

  • The presented VNA-based calibration algorithm significantly enhances the quantitative capabilities of SMM.
  • This method provides a reliable approach for nanoscale carrier density profiling in semiconductors.
  • The algorithm's independence allows for broad applicability in materials research and device analysis.