A physically based compact I-V model for monolayer TMDC channel MOSFET and DMFET biosensor

Area of Science:

• Semiconductor device physics
• Materials science
• Nanotechnology

Background:

• Monolayer transition metal dichalcogenides (TMDCs) offer unique electronic properties for next-generation devices.
• Accurate modeling is crucial for understanding and optimizing TMDC-based field-effect transistors (FETs).

Purpose of the Study:

• To develop a compact transport model for monolayer TMDC channel MOSFETs.
• To validate the model against experimental and numerical simulations.
• To investigate the potential of TMDC FETs for high-speed, low-power applications and biosensing.

Main Methods:

• Developed an analytical compact transport model solving Poisson's and drift-diffusion equations.
• Incorporated density of states from first-principle density functional theory (DFT) simulations.
• Applied gradual channel approximation for simplified solution.
• Benchmarked model results against experimental and numerical quantum simulation data.

Main Results:

• The model accurately predicts output and transfer characteristics for monolayer WSe2 FETs.
• Excellent ON/OFF state performance was confirmed for WSe2 FETs.
• The model was extended to simulate a MoS2-based dielectric modulated FET for biosensing.

Conclusions:

• The developed compact model is a valuable tool for designing and analyzing monolayer TMDC FETs.
• Monolayer TMDC FETs show promise for high-speed, low-power electronics.
• The model's extension to biosensing highlights the versatility of TMDC devices for molecular detection.