A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

Bai Sun1, Xuejiao Zhang2, Guangdong Zhou3

  • 1School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China; Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu, Sichuan 610031, China.

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