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A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate
Bai Sun1, Xuejiao Zhang2, Guangdong Zhou3
1School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China; Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu, Sichuan 610031, China.
Abstract:
In this work, a flexible resistive switching memory device based on ZnO film was fabricated using a foldable Polyethylene terephthalate (PET) film as substrate while Ag and Ti acts top and bottom electrode. Our as-prepared device represents an outstanding nonvolatile memory behavior with good "write-read-erase-read" stability at room temperature. Finally, a physical model of Ag conductive filament is constructed to understanding the observed memory characteristics. The work provides a new way for the preparation of flexible memory devices based on ZnO films, and especially provides an experimental basis for the exploration of high-performance and portable nonvolatile resistance random memory (RRAM).
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