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Related Experiment Video

Updated: Dec 30, 2025

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
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Doping assessment in GaAs nanowires.

N Isik Goktas1,2, E M Fiordaliso3, R R LaPierre1,4

  • 1Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, ON, L8S 4L7, Canada.

Nanotechnology
|March 16, 2018
PubMed
Summary

Controlling impurity doping in semiconductor nanowires (NWs) is key for optoelectronics. This study found beryllium (p-type) doping in gallium arsenide (GaAs) NWs matched thin films, but tellurium (n-type) doping was less effective.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Semiconductor nanowires (NWs) are promising for advanced optoelectronic devices.
  • Controlling impurity doping is crucial for fabricating p-n junctions in NWs.
  • Gallium arsenide (GaAs) NWs are a key material for these applications.

Purpose of the Study:

  • To investigate the incorporation of beryllium (p-type) and tellurium (n-type) dopants in self-assisted GaAs NWs.
  • To compare dopant incorporation and carrier concentrations in NWs versus thin film (TF) standards.
  • To understand the mechanisms governing dopant incorporation in NWs.

Main Methods:

  • Growth of self-assisted GaAs NWs on (111) Si using molecular beam epitaxy.
  • Characterization using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry (SIMS), and electron holography.

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  • Analysis of carrier concentration in doped NWs.

    • Main Results:

    • Be-doped GaAs NWs exhibited carrier concentrations comparable to TF standards.
    • Te-doped GaAs NWs showed at least a one order of magnitude lower carrier concentration than TF standards.
    • Differences in dopant incorporation mechanisms between p-type and n-type dopants were observed.

    Conclusions:

    • Self-assisted GaAs NWs can be doped with beryllium to achieve carrier concentrations similar to thin films.
    • Tellurium doping in GaAs NWs is less efficient than in thin films, suggesting challenges in n-type doping.
    • Further research into dopant incorporation mechanisms is needed for optimizing NW-based devices.