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Uniform Tellurium Doping in Black Phosphorus Single Crystals by Chemical Vapor Transport
Ziming Zhang1, Muhammad Khurram1, Zhaojian Sun1
1Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry , Tsinghua University , Beijing 100084 , China.
Abstract:
Doping has been a reliable way to improve the properties of black phosphorus (BP). However, a uniform and large amount of doping in BP remains a challenge. Herein, the synthesis of tellurium-doped black phosphorus (Te-doped BP) single crystals with high crystalline quality is achieved by the chemical vapor transport reaction method. The synthetic route enables a uniform and relatively large amount (up to 0.5% atomic ratio) of Te-doping in BP single crystals. The electrocatalytic oxygen evolution reaction (OER) properties of few-layer Te-doped BP nanosheets prepared by liquid exfoliation were also investigated for the first time. Electrochemical tests demonstrated that the OER onset-potential of undoped and Te-doped BP nanosheets was 1.63 and 1.49 V, respectively. The result implies that doping provides an effective route to enhance the electrochemical OER performance of BP.
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