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Evidence for Layered Quantized Transport in Dirac Semimetal ZrTe5
Wei Wang1, Xiaoqian Zhang1, Huanfeng Xu1
1National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Abstract:
ZrTe5 is an important semiconductor thermoelectric material and a candidate topological insulator. Here we report the observation of Shubnikov-de Hass (SdH) oscillations accompanied by quantized Hall resistance in bulk ZrTe5 crystal, with a mobility of 41,000 cm2V-1s-1. We have found that the quantum oscillations does not originate from the surface states, but from the bulk states. Each single layer ZrTe5 acted like an independent 2D electron system in the quantum Hall regime having the same carrier density and mobilities, while the bulk of the sample exhibits a multilayered quantum Hall effect.
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