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Potential of Silicon Amendment for Improved Wheat Production
Olga S Walsh1, Sanaz Shafian2, Jordan R McClintick-Chess3
1Department of Plant Sciences, Southwest Research and Extension Center, University of Idaho, Parma, ID 83660, USA. owalsh@uidaho.edu.
Silicon (Si) application did not significantly impact wheat plant height, grain yield, or protein content in non-stressed conditions. Further research will explore different Si sources and stressed environments.
Area of Science:
- Agricultural Science
- Plant Nutrition
- Soil Science
Background:
- Silicon (Si) is recognized as a beneficial substance for crops, improving plant health, nutrient uptake, and yield, particularly under stress.
- While not essential, Si plays a crucial role in plant nutrition and resilience.
- Previous studies globally indicate positive crop responses to Si application.
Purpose of the Study:
- To evaluate the effect of silicon (Si) fertilization rates and application timing on wheat plant height, grain yield (GY), and grain protein content (GP).
- To assess the impact of a specific amorphous volcanic tuff-derived Si product on irrigated winter wheat under non-stressed conditions.
Main Methods:
- A split-plot experimental design was employed over two growing seasons in Idaho.
- Three silicon (Si) fertilization rates (140, 280, and 560 kg Si ha⁻¹) and two application times (at planting and tillering) were tested.
- MontanaGrow™ (0-0-5), a Si product from amorphous volcanic tuff, was used.
Main Results:
- No significant effects of Si rate or application time were observed on plant height, nutrient uptake, grain yield (GY), or grain protein content (GP).
- The results pertain specifically to irrigated winter wheat grown under non-stressed environmental conditions.
Conclusions:
- The specific Si fertilizer source (amorphous volcanic tuff) may explain the lack of significant impact under non-stressed conditions.
- Future research is planned to investigate Si's effects on wheat growth and yield in both non-stressed and stressed environments, using diverse Si sources and application methods.
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