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Related Concept Videos

Quantum Numbers02:43

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It is said that the energy of an electron in an atom is quantized; that is, it can be equal only to certain specific values and can jump from one energy level to another but not transition smoothly or stay between these levels.
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Shortly after de Broglie published his ideas that the electron in a hydrogen atom could be better thought of as being a circular standing wave instead of a particle moving in quantized circular orbits, Erwin Schrödinger extended de Broglie’s work by deriving what is now known as the Schrödinger equation. When Schrödinger applied his equation to hydrogen-like atoms, he was able to reproduce Bohr’s expression for the energy and, thus, the Rydberg formula governing hydrogen spectra.
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Updated: Feb 12, 2026

Preparation of ZnO Nanorod/Graphene/ZnO Nanorod Epitaxial Double Heterostructure for Piezoelectrical Nanogenerator by Using Preheating Hydrothermal
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Multilayer Graphene-GeSn Quantum Well Heterostructure SWIR Light Source.

Hui Cong1,2, Fan Yang1,2, Chunlai Xue1,2

  • 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.

Small (Weinheim an Der Bergstrasse, Germany)
|April 4, 2018
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel silicon-based light source using graphene and GeSn/Ge quantum wells. This breakthrough offers a promising solution for integrating efficient light emitters into silicon photonics, overcoming previous integration challenges.

Keywords:
GeSn quantum wellsgrapheneheterostructureslight sourcesshort-wave infrared light

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Silicon photonics integration is hindered by the lack of efficient light sources.
  • Existing solutions often rely on optical pumping or face challenges with material epitaxy and metal contact light absorption.
  • Electrical pumping is the ultimate goal for seamless integration into complementary metal-oxide-semiconductor (CMOS) technology.

Purpose of the Study:

  • To design and fabricate a novel Si-based light source.
  • To overcome critical obstacles in Si-based laser fabrication, including material growth and light absorption.
  • To develop an electrically pumped laser for advanced silicon photonics.

Main Methods:

  • Fabrication of a multilayer heterostructure combining graphene and Germanium-Tin/Germanium (GeSn/Ge) quantum wells (QWs).
  • Utilizing specially designed Ge0.9Sn0.1/Ge QWs as the active light-emitting layer.
  • Employing graphene's high optical transmittance to reduce cladding layer requirements and mitigate metal contact absorption.

Main Results:

  • Achieved photoluminescence (PL) peak at 2050 nm from the GeSn/Ge quantum wells.
  • Demonstrated electroluminescence (EL) peak at 2100 nm under an injection current density of 100 A cm-2.
  • Confirmed good performance as a short-wave infrared (SWIR) light source through both PL and EL measurements.

Conclusions:

  • The developed graphene and GeSn/Ge quantum well heterostructure serves as an effective Si-based light source.
  • This approach provides a viable alternative for light sources in silicon photonics, addressing integration challenges.
  • The study paves the way for electrically pumped lasers compatible with CMOS processes.