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Monolithic Integration of InAs Quantum Dot Lasers with Waveguide Photodetector on CMOS-Compatible (001) Silicon.

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We achieved monolithic integration of InAs quantum dot laser diodes (LDs) and waveguide photodetectors (WPDs) on silicon. This breakthrough enables on-chip power monitoring for compact photonic integrated circuits.

Keywords:
focused ion beammonolithic integrationphotodetectorquantum dotsilicon photonics

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Area of Science:

  • Photonics
  • Materials Science
  • Electrical Engineering

Background:

  • Silicon photonics demands efficient, on-chip laser diodes (LDs) and low-noise photodetectors (PDs) compatible with CMOS technology.
  • Monolithic integration is key for advancing photonic integrated circuits (PICs).

Purpose of the Study:

  • To demonstrate the monolithic integration of InAs quantum dot laser diodes (LDs) and waveguide photodetectors (WPDs) on a CMOS-compatible silicon platform.
  • To develop a strategy for precise positioning and isolation of LDs and WPDs for compact PICs.

Main Methods:

  • Utilized an identical epitaxial structure for both InAs quantum dot LDs and waveguide PDs on (001) silicon.
  • Employed XeF2-assisted focused ion beam trenching for isolating the LD and WPD components.
  • Characterized the performance of the integrated laser diode and photodetector system.

Main Results:

  • Achieved a low threshold current density of 170 A/cm² for the LD and a low dark current density of 4.9 × 10⁻⁵ A/cm² at -1 V for the WPD.
  • Demonstrated a single-facet continuous-wave output power of 48 mW from the LD and a broad O-band spectral response for the WPD.
  • Observed a clear correlation between LD output power and WPD photocurrent, with an estimated responsivity of 0.118 A/W.

Conclusions:

  • The monolithic integration of InAs QD LDs and WPDs on silicon is feasible.
  • This approach enables on-chip power monitoring, crucial for compact and high-density photonic integration.
  • The developed strategy is ideal for creating reliable and miniaturized photonic devices.