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E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate.

Wenqian Liang1,2, Wenqi Wei2, Dong Han3

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Materials (Basel, Switzerland)
|April 27, 2024
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Summary

Researchers developed the first E-band (1365 nm) Indium Arsenide quantum dot (QD) micro-disk lasers grown directly on silicon substrates. This breakthrough enables on-chip light sources for silicon photonics and telecommunication transmitters.

Keywords:
E-band quantum dotsIII-V on siliconmicro-disk lasersmolecular beam epitaxyphotonic integrated circuits

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Area of Science:

  • Semiconductor Physics
  • Materials Science
  • Optoelectronics

Background:

  • Directly growing III-V quantum dot (QD) lasers on silicon is crucial for on-chip light sources in photonic integrated circuits (PICs).
  • Existing research focuses on O-, C-, and L-band QD lasers on silicon, leaving the E-band telecommunication wavelength unaddressed.
  • The development of E-band QD lasers on silicon is essential for expanding the capabilities of silicon photonics.

Purpose of the Study:

  • To demonstrate the first E-band (1365 nm) Indium Arsenide (InAs) quantum dot (QD) micro-disk lasers epitaxially grown on silicon (001) substrates.
  • To overcome the limitations of current QD laser technologies on silicon for extended telecommunication wavelengths.
  • To pave the way for integrated silicon photonic telecommunication transmitters.

Main Methods:

  • Utilizing a III-V/IV hybrid dual-chamber molecular beam epitaxy (MBE) system for epitaxial growth.
  • Fabricating micro-disk laser devices on Si (001) substrates.
  • Characterizing the optical performance of the fabricated E-band InAs QD micro-disk lasers.

Main Results:

  • Successfully demonstrated the first E-band (1365 nm) InAs QD micro-disk lasers directly grown on Si (001).
  • Achieved an optical threshold power of 0.424 mW at 200 K.
  • Obtained a quality factor (Q) of 1727.2 at 200 K for the micro-disk laser device.

Conclusions:

  • The direct epitaxial growth of E-band InAs QD lasers on silicon is feasible.
  • These results represent a significant advancement towards on-chip silicon photonic telecommunication transmitters.
  • This work opens new avenues for integrated optoelectronics operating at extended telecommunication wavelengths.