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Related Concept Videos

Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
756
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

402
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Types of Semiconductors01:20

Types of Semiconductors

690
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
690
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

290
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Non-ohmic Devices00:51

Non-ohmic Devices

1.1K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
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Monolithic integration of embedded III-V lasers on SOI.

Wen-Qi Wei1,2, An He3, Bo Yang1,4

  • 1Institute of Physics, Chinese Academy of Sciences, Beijing, China.

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Researchers achieved monolithic integration of InAs/GaAs quantum dot lasers on silicon-on-insulator (SOI) substrates. This breakthrough enables scalable, cost-effective on-chip light sources for dense photonic integration.

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Area of Science:

  • Photonics
  • Materials Science
  • Semiconductor Engineering

Background:

  • Silicon photonics offers excellent device properties and CMOS compatibility.
  • Monolithic integration of III-V lasers with silicon photonics remains a significant challenge for ultra-dense integration.

Purpose of the Study:

  • To demonstrate monolithic integration of III-V quantum dot lasers directly grown on silicon-on-insulator (SOI) substrates.
  • To overcome long-standing obstacles in on-chip light source development for photonic integration.

Main Methods:

  • Direct epitaxial growth of InAs/GaAs quantum dot (QD) lasers on trenched SOI substrates using hybrid molecular beam epitaxy (MBE).
  • Utilizing patterned grating structures within SOI trenches for monolithic out-coupling.
  • Addressing epitaxy and fabrication challenges in the integrated architecture.

Main Results:

  • Achieved high-performance embedded InAs QD lasers monolithically integrated with butt-coupled silicon waveguides.
  • Demonstrated continuous-wave (CW) lasing up to 85°C.
  • Measured maximum output power of 6.8 mW from silicon waveguides with ~ -6.7 dB coupling efficiency.

Conclusions:

  • Presented a scalable, low-cost epitaxial method for on-chip III-V lasers on SOI.
  • Enabled direct coupling of light sources to silicon photonic components.
  • Paved the way for future high-density photonic integration.