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Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts.

Ching-Hua Wang1, Jean Anne C Incorvia1, Connor J McClellan1

  • 1Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States.

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Summary

Researchers developed unipolar n-type black phosphorus (BP) transistors using scandium and erbium contacts. This breakthrough achieves high n-type current, crucial for low-power digital circuits.

Keywords:
Black phosphoruserbium contactlow work functionscandium contacttransistors

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Black phosphorus (BP) is a 2D semiconductor with high carrier mobility, promising for advanced transistors.
  • Existing BP transistors often exhibit ambipolar or p-type transport, limiting applications in low-power digital circuits requiring unipolar behavior.

Purpose of the Study:

  • To fabricate unipolar n-type black phosphorus transistors.
  • To investigate the role of low work function metal contacts in achieving n-type unipolar transport.
  • To understand the mechanism behind the observed transport behavior.

Main Methods:

  • Fabrication of black phosphorus transistors using scandium (Sc) and erbium (Er) as contact metals.
  • Electrical characterization of the transistors, including current-voltage measurements.
  • Transmission electron microscopy (TEM) analysis of the metal-BP interface.

Main Results:

  • Achieved unipolar n-type black phosphorus transistors with a record high n-type current of 200 μA/μm in 6.5 nm thick BP.
  • Observed a transition from ambipolar to n-type unipolar transport over one month at room temperature for capped devices.
  • Identified an intermixing layer at the Sc/BP interface, forming a low n-type Schottky barrier.

Conclusions:

  • Low work function metal contacts (Sc, Er) enable unipolar n-type transport in black phosphorus transistors.
  • The interfacial intermixing layer is key to achieving the desired n-type Schottky barrier and suppressing p-type current.
  • These unipolar n-type BP transistors are highly suitable for low-power digital logic applications due to reduced off-state power consumption.