Multilayered structures using thin plates of LiTaO₃ for acoustic wave resonators with high quality factor

Multilayered substrates, including thin plates of LiTaO₃ (LT) bonded to silicon (Si) or glass wafers either directly or via intermediate layers, were numerically investigated as potential materials for surface acoustic wave (SAW) resonators with high quality (Q)-factor required for the next generation of mobile communication systems. The propagation velocities and electromechanical coupling coefficients of shear horizontally (SH) polarized acoustic waves were estimated as functions of LT orientation and thicknesses of all layers in LT/Si, LT/SiO₂/Si, LT/glass, LT/AlN/glass and structures with several pairs of SiO₂/AlN layers between LT and the glass wafer. Optimal combinations of cut angle, LT and electrode thicknesses, as well as the number and thicknesses of intermediate layers, required for the construction of resonators with improved performance were observed for each analyzed structure. In the resonators employing LT/Si and LT/SiO₂/Si structures with 30°YX - 48°YX LT cuts, high electromechanical coupling k², reaching 11.6%, can be combined with high velocities up to 4000 m/s, zero TCF at the resonant frequency and Q-factors that are considerably higher than in the LSAW filters using regular LT substrates. To understand the loss mechanisms that limit resonator Q-factors in LT/glass, mechanical displacements that accompany wave propagation in multilayered structures were visualized. Investigation of the nature of acoustic modes and their transformations with number and thicknesses of the layers revealed that the low-velocity glass wafer can be used as a supporting substrate if an intermediate AlN layer or alternating pairs of low- and high-velocity layers, for example SiO₂/AlN, are introduced between LT and the glass wafer.