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Updated: Feb 12, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility

Cheon Heo, Jongjin Jang, Kyngjae Lee

    Journal of Nanoscience and Nanotechnology
    |April 10, 2018
    PubMed

    Keywords:
    MOCVDAlGaN/GaN HEMTEdge and Screw Dislocation2DEGMobilityCarrier Density

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