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Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar 112¯2 InGaN/GaN

Mi-Hyang Sheen1, Yong-Hee Lee1, Jongjin Jang2

  • 1Research Institute of Advanced Materials, Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|July 14, 2023
PubMed

Keywords:
TEM-cathodoluminescenceindium concentrationsemi-polar GaNsurface undulation

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