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Published on: May 13, 2020
High Thermal Conductive Crystalline Organohalide for Endurable Resistive Switching Non-Volatile Memory
Joo-Hong Lee1,2, Sung-Kwang Jung1,2, Gimoon Kim3
1Department of Nano Science and Technology and Department of Nanoengineering, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea.
This study introduces a novel Dabconium ammonium triiodide (DABCO-NH4-I3) memristive device for eco-friendly electronics. The new material offers exceptional reliability and stability for next-generation wearable applications.
Area of Science:
- Materials Science
- Organic Electronics
- Device Physics
Background:
- Organic-based memristive devices are promising for eco-friendly wearable electronics due to material flexibility and biocompatibility.
- However, poor operational reliability and stability hinder their widespread adoption.
- Existing organic materials face challenges in achieving high performance and endurance.
Purpose of the Study:
- To demonstrate a highly reliable and stable memristive device using a crystalline organohalide material.
- To overcome the limitations of current organic materials in memristor applications.
- To introduce Dabconium ammonium triiodide (DABCO-NH4-I3) as a new class of materials for high-performance organic electronics.
Main Methods:
- Fabrication of a conductive bridging random access memory (CBRAM) device based on crystalline DABCO-NH4-I3.
- Characterization of the device's electrical properties, including operating voltage, on/off ratio, and multi-level storage capability.
- Evaluation of device reliability and endurance through program-erase cycling at different temperatures, considering thermal conductivity.
Main Results:
- The DABCO-NH4-I3 memristive device exhibited millivolt-scale operating voltages and a high on/off ratio of ≈109.
- The material's low dielectric constant, hexagonal crystal structure, and high bandgap contributed to its excellent performance.
- The device demonstrated remarkable endurance, with over 103 program-erase cycles at both room temperature and 85 °C, attributed to its higher thermal conductivity suppressing Joule heating.
Conclusions:
- Crystalline DABCO-NH4-I3 offers exceptional reliability and endurance for memristive devices.
- This material overcomes critical challenges faced by existing organic materials in terms of stability and performance.
- The study introduces a promising new class of materials for advanced, high-performance next-generation organic electronic devices.
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