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Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a

Antonio Campos1, Sergi Riera-Galindo1, Joaquim Puigdollers2

  • 1Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) and Networking Research Center on Bioengineering , Biomaterials and Nanomedicine (CIBER-BBN), Campus UAB , Cerdanyola del Vallès , 08193 Barcelona , Spain.

ACS Applied Materials & Interfaces
|April 20, 2018
PubMed

Keywords:
OFETdensity-of-stateshigh stabilityn-typesemiconductor−dielectric interface

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