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Area of Science:

  • Quantum Information Science
  • Materials Science
  • Nanophotonics

Background:

  • Artificial atomic systems in solids are crucial for quantum information processing and nanophotonic networks.
  • Two-dimensional hexagonal boron nitride (hBN) is a promising material for hosting single photon emitters.

Purpose of the Study:

  • To develop robust fabrication methods for quantum emitters in hexagonal boron nitride (hBN).
  • To enhance the concentration and photostability of these emitters for quantum applications.

Main Methods:

  • Fabrication of emitters using plasma and thermal annealing techniques on tape-exfoliated hBN crystals.
  • A two-step process involving Argon (Ar) plasma etching followed by Ar annealing.
  • Density functional theory (DFT) modeling to investigate emitter structures.
  • Annealing hBN in air to confirm oxygen's role.

Main Results:

  • A two-step Ar plasma etching and annealing process significantly increases emitter concentration (eight-fold).
  • This method yields photostable room-temperature emitters with emission wavelengths >700 nm.
  • DFT modeling suggests emitters are linked to oxygen-containing defect complexes.
  • Annealing in air confirms the role of oxygen in emitter generation.

Conclusions:

  • The developed fabrication methods enhance the understanding and production of quantum emitters in hBN.
  • These findings contribute to the nanofabrication toolkit for integrated quantum nanophotonic circuits.