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Updated: Feb 11, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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50-nm Nano-Scaled Vertical-Transistor with NiSi₂ Seed-Induced Vertically Crystallized Poly-Silicon Channel for

Jae Hyo Park, Hyung Yoon Kim, Ki Hwan Seok

    Journal of Nanoscience and Nanotechnology
    |April 24, 2018
    PubMed

    Keywords:
    Nano-Scaled TransistorNiSi₂ MigrationPoly-Silicon ChannelDensity-of-States

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