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First-Principles Study of Charge Diffusion between Proximate Solid-State Qubits and Its Implications on Sensor

Jyh-Pin Chou1, Zoltán Bodrog1, Adam Gali2

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Summary
This summary is machine-generated.

We developed a method to calculate charge diffusion between solid-state qubits, like nitrogen-vacancy (NV) centers in diamond. This explains qubit interactions and decoherence in quantum networks.

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Area of Science:

  • Quantum computing and sensing
  • Materials science and engineering
  • Solid-state physics

Background:

  • Paramagnetic point defects in solids serve as promising solid-state qubits for quantum networks and nanoscale sensors.
  • Proximity of qubits can lead to interactions, causing electron spin or charge fluctuations, impacting qubit performance.

Purpose of the Study:

  • To develop a first-principles method for calculating tunneling-mediated charge diffusion between point defects.
  • To apply this method to nitrogen-vacancy (NV) qubits in diamond and understand qubit interactions.

Main Methods:

  • First-principles calculations to model tunneling-mediated charge diffusion.
  • Application of the method to nitrogen-vacancy (NV) qubits in diamond.
  • Development of a decoherence model based on interacting qubits.

Main Results:

  • Calculated tunneling rates show quantitative agreement with experimental data.
  • Demonstrated that proximate neutral and negatively charged NV defect pairs can form NV-NV molecules.
  • Identified tunneling-mediated charge diffusion as a source of decoherence for near-surface NV qubits.

Conclusions:

  • The developed method accurately predicts charge diffusion between point defects.
  • Interacting NV qubits can form molecular structures, influencing quantum phenomena.
  • Tunneling-mediated charge diffusion is a key factor in NV qubit decoherence, crucial for designing robust quantum systems.