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Updated: Feb 11, 2026

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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
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Intrinsic Bond Strengths of Multiple C-C, Si-Si, and C-Si Bonds
1Institut für Organische Chemie TU Braunschweig Hagenring 30, 38106 Braunschweig (Germany) Fax: (+49) 531-391-5252.
Angewandte Chemie (International Ed. in English)
|May 2, 2018
Abstract:
Really a triple bond? According to quantum-chemical calculations of inverted Hessian matrices (compliance matrices), the strength of the C≡Si bond in I is only marginally stronger than the C=Si bond in silaethylene (II). Real-space force constants overestimate the C≡Si bond in I and should therefore be abandoned as bond strength descriptors.
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