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Correlation between electrical direct current resistivity and plasmonic properties of CMOS compatible titanium
Optics Express
|May 3, 2018
Summary
Titanium nitride (TiN) thin films
Area of Science:
- Plasmonics
- Materials Science
- Nanophotonics
Background:
- Surface plasmon polaritons (SPPs) are crucial for nanoscale optical phenomena.
- Titanium nitride (TiN) is a promising material for plasmonic applications at telecom wavelengths.
- Understanding factors influencing SPP propagation in TiN is essential for device development.
Purpose of the Study:
- To investigate the relationship between electrical resistivity and surface plasmon polariton damping distances in TiN thin films.
- To evaluate the relevance of direct current (dc) electrical resistivity for characterizing TiN plasmonic properties.
- To explore the impact of oxygen content on the plasmonic performance of TiN films.
Main Methods:
- Measurement of SPP damping distances in TiN films at 1.55 μm.
- Correlation of damping distances with dc electrical resistivity.
- Investigation using the Drude model with parameters from spectroscopic ellipsometry.
- Analysis of TiN films with varying oxygen content.
Main Results:
- SPP damping distances in TiN/Air decrease non-linearly from 40 to 16 μm as resistivity increases from 28 to 130 μΩ·cm.
- A near-unique dependence of damping distance on dc resistivity was found, validating its use for performance evaluation.
- Lower oxygen content in TiN films correlates with improved plasmonic performance.
Conclusions:
- DC electrical resistivity is a key parameter for assessing TiN plasmonic performance at telecom frequencies.
- Enhanced SPP damping distances in low-resistivity, low-oxygen TiN are attributed to reduced plasmon confinement, not lower absorption.
- TiN films with low oxygen content offer superior plasmonic properties for optical applications.
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