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    Actinic mask inspection for extreme ultraviolet lithography is crucial. This study demonstrates reflective-mode lensless imaging using ptychography to create detailed defect maps for mask samples.

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    Area of Science:

    • Semiconductor Manufacturing
    • Advanced Lithography Techniques
    • Metrology and Inspection

    Background:

    • Extreme ultraviolet (EUV) lithography is essential for future semiconductor technology nodes.
    • Current mask inspection methods face challenges for EUV applications.
    • Actinic mask inspection is a critical unmet need for EUV lithography implementation.

    Purpose of the Study:

    • To develop and demonstrate a novel reflective-mode lensless imaging technique for actinic mask inspection.
    • To provide a high-resolution defect map of patterned multi-layer mask samples at EUV wavelengths.
    • To enhance the quality of reconstructed images by improving defect detection capabilities.

    Main Methods:

    • Utilized ptychography in reflection mode at a 13.5 nm wavelength.
    • Employed a 6° angle of incidence relative to the surface normal for imaging.
    • Applied an extended difference map algorithm to account for illumination variations.

    Main Results:

    • Successfully achieved reflective-mode lensless imaging of a patterned multi-layer mask.
    • Generated a finely structured defect map of the tested mask sample.
    • Demonstrated substantial enhancement in reconstruction quality through the improved algorithm.

    Conclusions:

    • Reflective-mode lensless ptychography is a viable technique for actinic mask inspection in EUV lithography.
    • The developed method provides high-quality defect mapping essential for advanced semiconductor manufacturing.
    • Algorithm improvements significantly boost the reliability and precision of mask inspection.