Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Electron Orbital Model01:18

Electron Orbital Model

72.7K
Orbitals are the areas outside of the atomic nucleus where electrons are most likely to reside. They are characterized by different energy levels, shapes, and three-dimensional orientations. The location of electrons is described most generally by a shell or principal energy level, then by a subshell within each shell, and finally, by individual orbitals found within the subshells.
The first shell is closest to the nucleus, and it has only one subshell with a single spherical orbital called the...
72.7K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.1K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.1K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

632
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
632
Properties of Transition Metals02:58

Properties of Transition Metals

30.0K
Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.
30.0K
Atomic Orbitals02:44

Atomic Orbitals

44.9K
An atomic orbital represents the three-dimensional regions in an atom where an electron has the highest probability to reside. The radial distribution function indicates the total probability of finding an electron within the thin shell at a distance r from the nucleus. The atomic orbitals have distinct shapes which are determined by l, the angular momentum quantum number. The orbitals are often drawn with a boundary surface, enclosing densest regions of the cloud.
44.9K
Oxidation Numbers03:14

Oxidation Numbers

43.0K
In redox reactions, the transfer of electrons occurs between reacting species. Electron transfer is described by a hypothetical number called the oxidation number (or oxidation state). It represents the effective charge of an atom or element, which is assigned using a set of rules.
43.0K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

A Quality Initiative for Posterior Spinal Fusion in Adolescent Idiopathic Scoliosis (AIS): Liposomal Bupivacaine With Dexamethasone Use Results in Substantial Reduction in Inpatient Opioid Use.

Journal of pediatric orthopedics·2026
Same author

Paediatric therapeutic development workshop on medulloblastoma.

British journal of cancer·2026
Same author

Development of a target product profile for artificial intelligence in diabetic eye screening in England: a modified Delphi consensus study.

The Lancet. Digital health·2026
Same author

International Consensus Statements on the Use of Topical Endoscopic Hemostatic Powders in the Treatment of Acute Gastrointestinal Bleeding.

Journal of clinical gastroenterology·2026
Same author

Electroporation as a strategy to improve the efficacy of chemotherapy in neuroblastoma: an in vitro study.

Radiology and oncology·2026
Same author

Diverse Trial Designs, Populations, and Outcomes: A Systematic Literature Review of Trials for the Treatment of Hereditary Angioedema Attacks.

Advances in therapy·2026

Related Experiment Video

Updated: Feb 11, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

A silicon metal-oxide-semiconductor electron spin-orbit qubit.

Ryan M Jock1, N Tobias Jacobson2, Patrick Harvey-Collard3,4

  • 1Sandia National Laboratories, Albuquerque, NM, 87185, USA. rmjock@sandia.gov.

Nature Communications
|May 4, 2018
PubMed
Summary

Silicon metal-oxide-semiconductor (MOS) interfaces enable two-axis control for spin qubits by leveraging spin-orbit coupling. This approach demonstrates competitive noise levels and long coherence times in quantum information processing.

More Related Videos

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.4K
Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
12:38

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium

Published on: December 16, 2011

15.2K

Related Experiment Videos

Last Updated: Feb 11, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.4K
Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
12:38

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium

Published on: December 16, 2011

15.2K

Area of Science:

  • Quantum Information Science
  • Condensed Matter Physics
  • Materials Science

Background:

  • Silicon metal-oxide-semiconductor (MOS) systems are crucial for spin-based quantum computing.
  • Interface imperfections cause 1/f noise and g-factor variability due to spin-orbit (SO) effects.

Purpose of the Study:

  • To utilize interface SO coupling as a control axis for a double-quantum-dot singlet-triplet qubit.
  • To investigate the impact of MOS interface properties on qubit noise and coherence.

Main Methods:

  • Fabrication and characterization of a silicon MOS double-quantum-dot qubit.
  • Measurement of g-factor dependence on magnetic field orientation to probe SO contributions (Rashba and Dresselhaus).
  • All-electrical two-axis control to assess interface noise and dephasing times.

Main Results:

  • Observed g-factor variations consistent with interface SO coupling.
  • Measured an inhomogeneous dephasing time of 1.6 μs, attributed to high 28Si enrichment.
  • Quantified quasi-static charge noise detuning variance at 2 μeV, competitive with other semiconductor qubits.

Conclusions:

  • The MOS interface inherently supports two-axis qubit control via SO coupling.
  • Interface properties do not necessarily increase noise compared to alternative qubit platforms.
  • Demonstrated a viable pathway for high-fidelity spin qubit operation in silicon MOS systems.