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Updated: Feb 10, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Effects of carbon-based impurities on graphene growth
Xiaoming Ge1, Yanhui Zhang, Zhiying Chen
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technoloy (SIMIT), Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China. ghyu@mail.sim.ac.cn.
Abstract:
In this paper, we studied the growth of graphene on an untreated Cu substrate and further studied the effect of carbon-based impurities on the nucleation of graphene in different growth environments. It is found that the impurities on the surface of the Cu substrate easily lead to damage of the graphene, and the impurities do not always promote nucleation as previously reported, but inhibit nucleation in a high etching environment. Finally, based on experimental results, a model of nucleation and growth of graphene around impurities is presented.
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