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Oxidation Numbers

Oxidation Numbers

In redox reactions, the transfer of electrons occurs between reacting species. Electron transfer is described by a hypothetical number called the oxidation number (or oxidation state). It represents the effective charge of an atom or element, which is assigned using a set of rules.

Oxidation-Reduction Reactions

Oxidation-Reduction Reactions

Oxidation–Reduction Reactions

Alkali Metals

Alkali Metals

Group 1 elements are soft and shiny metallic solids. They are malleable, ductile, and good conductors of heat and electricity. The melting points of the alkali metals are unusually low for metals and decrease going down the group, while the density increases going down the group with the exception of potassium (Table 1).
Table 1: Properties of the alkali metals

Properties of Transition Metals

Properties of Transition Metals

Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.

Metal-Ligand Bonds

Metal-Ligand Bonds

The hemoglobin in the blood, the chlorophyll in green plants, vitamin B-12, and the catalyst used in the manufacture of polyethylene all contain coordination compounds. Ions of the metals, especially the transition metals, are likely to form complexes.
In these complexes, transition metals form coordinate covalent bonds, a kind of Lewis acid-base interaction in which both of the electrons in the bond are contributed by a donor (Lewis base) to an electron acceptor (Lewis acid). The Lewis acid in...

Bonding in Metals

Bonding in Metals

Metallic bonds are formed between two metal atoms. A simplified model to describe metallic bonding has been developed by Paul Drüde called the “Electron Sea Model”.

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Related Experiment Video

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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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Nature-Inspired Capillary-Driven Welding Process for Boosting Metal-Oxide Nanofiber Electronics.

You Meng, Kaihua Lou, Rui Qi

¹Electronic Ceramics Center , DongEui University , Busan 614714 , Korea.

ACS Applied Materials & Interfaces

|May 26, 2018

Summary

A novel capillary-driven welding technique enhances semiconducting nanofiber networks (NFNs) by improving interfiber connections. This leads to superior mechanical and electrical properties for advanced electronics.

Keywords:

capillary condensation field-effect transistors grain-boundary modulation nanofibers networks welding process

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Area of Science:

Materials Science
Nanotechnology
Electronics Engineering

Background:

Semiconducting nanofiber networks (NFNs) show promise for large-area, low-cost electronics.
High contact resistance in NFNs hinders device performance and increases energy consumption.

Purpose of the Study:

To develop a controllable welding technique for NFNs to overcome contact resistance issues.
To demonstrate the potential of welded NFNs in high-performance electronic devices.

Main Methods:

A bioinspired capillary-driven process was employed for controllable welding of NFNs.
Localized capillary condensation and curvature-induced surface diffusion were utilized for improved interfiber connections.
Field-effect transistors (FETs) were fabricated using welded Hf-doped In2O3 (InHfO) NFNs and integrated with ZrOx dielectric thin films.

Main Results:

The welding technique successfully improved interfiber connections, enhancing mechanical and electrical properties of NFNs.
FETs based on welded InHfO NFNs demonstrated excellent performance, with field-effect mobility reaching 25 cm^2 V^-1 s^-1 and an operating voltage of 3 V.
Grain-boundary modulation mechanisms in polycrystalline metal-oxide nanofibers were discussed.

Conclusions:

The capillary-driven welding process is a potent method for fabricating high-performance metal-oxide NFNs.
Grain-boundary modulation is crucial for optimizing the electrical characteristics of these NFNs.
These advancements pave the way for high-performance, large-scale, and low-power functional electronics.