Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials.

Area of Science:

• Materials Science
• Nanotechnology
• Solid State Physics

Background:

• Hexagonal boron nitride (h-BN) is a key dielectric material for 2D electronics.
• Existing research focuses on h-BN synthesis and electrical properties, neglecting processing techniques like etching.
• Effective etching methods are crucial for integrating h-BN into advanced 2D material devices.

Purpose of the Study:

• To develop an atomic-scale etching method for hexagonal boron nitride (h-BN).
• To enable precise fabrication of 2D material-based electronic devices using h-BN.
• To demonstrate the utility of h-BN etching in creating high-performance MoS2 transistors.

Main Methods:

• Atomic-scale etching of h-BN using Argon (Ar) plasma at room temperature.
• Utilizing a top-down etching approach for controlled material removal.
• Fabricating a top-gate MoS2 field-effect transistor (FET) with h-BN gate dielectric.

Main Results:

• Achieved a controllable etching rate for h-BN below 1 nm/min.
• Demonstrated atomic-scale etching of h-BN down to the monolayer level.
• Successfully fabricated MoS2 FETs with h-BN dielectric exhibiting high performance.

Conclusions:

• The developed Ar plasma etching technique allows for precise, atomic-level control over h-BN.
• This method is essential for creating reliable electrical contacts in 2D heterostructures.
• The fabricated MoS2 FETs showcase excellent electrical characteristics, validating the etching process for device applications.