Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.4K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.4K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

746
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
746

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Selective histone deacetylase inhibition as a therapeutically relevant strategy in H3K27M-glioma.

Neuro-oncology·2026
Same author

Correction: INO80 regulates promoter-associated R-loops to coordinate transcription and maintain genome stability in embryonic stem cells.

Biological research·2026
Same author

Sensorimotor network hyperactivity and impaired psychomotor performance associated with cumulative occupational stress in firefighters.

Brain research bulletin·2026
Same author

Network-level structural alterations distinguish persistent from remitted post-traumatic stress disorder: a morphometric covariance approach.

European journal of psychotraumatology·2026
Same author

RNA exosome-mediated RNA surveillance governs developmental timing in the human cerebellum.

bioRxiv : the preprint server for biology·2026
Same author

Accelerated Brain Aging in Young Women with Posttraumatic Stress Disorder.

Experimental neurobiology·2026
Same journal

Formation of Bimetallic Nanoparticles via Exsolution Using a Reducible Metal Oxide Capping Layer.

ACS nano·2026
Same journal

Cold-Driven Thermoelectric Patch for Postoperative Tumor Control.

ACS nano·2026
Same journal

Chemically Fueled Interfacial Supramolecular Polymerization.

ACS nano·2026
Same journal

Tactile Neuromorphic Ion-Gated Vertical Transistor Displays Enabling Dual-Output Reservoir Computing.

ACS nano·2026
Same journal

In Situ Oxygen Shuttling within a Bilayer Electrified Membrane Enables Aeration-Free Electro-Fenton Water Purification.

ACS nano·2026
Same journal

Single Atoms as Growth Directors: From Graphene Edges to Atomically Precise Interfaces in 2D Materials.

ACS nano·2026
See all related articles

Related Experiment Video

Updated: Jan 8, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.3K

Feature-Selective Preprocessing with Electrically Robust Boron Nitride-Based Dynamic Memristors for Reliable

Wonbae Ahn1, Seungsun Yoo2, Kang Hyun Lee2

  • 1School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.

ACS Nano
|December 22, 2025
PubMed
Summary
This summary is machine-generated.

This study introduces a novel memristor for reservoir computing (RC), enhancing artificial intelligence (AI) efficiency. The device demonstrates remarkable endurance and improves AI accuracy by simplifying data processing for edge computing applications.

Keywords:
boron nitridedynamic memristorlightweight neural networkpreprocessingreservoir computing

More Related Videos

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.2K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.3K

Related Experiment Videos

Last Updated: Jan 8, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.3K
A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.2K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.3K

Area of Science:

  • Materials Science
  • Computer Science
  • Artificial Intelligence

Background:

  • Reservoir computing (RC) offers efficient AI computation via dynamic data preprocessing.
  • Existing RC methods face accuracy limitations due to data loss and physical reservoir switching endurance issues.

Purpose of the Study:

  • To develop an electrically robust memristor for dynamic reservoir computing applications.
  • To address accuracy limitations and switching endurance challenges in current RC systems.

Main Methods:

  • Fabrication of a Cu/a-BN/Ti(TiO X) dynamic memristor with a built-in series resistance structure.
  • Characterization of the memristor's volatile, gradual switching, and reservoir dynamics.
  • Simulation of noisy image classification using the developed memristor for RC and Wide RC (WRC) with Convolutional Neural Networks (CNNs).

Main Results:

  • The memristor exhibited excellent endurance (1.2 million switching updates) and uniformity, suppressing filament overgrowth.
  • RC implementation simplified image processing by selecting key spatial features, enhancing network efficiency.
  • The proposed WRC/CNN architecture achieved high accuracy with minimal energy increase, enabling lightweight edge AI.

Conclusions:

  • The novel memristor provides a robust and efficient solution for RC, overcoming previous limitations.
  • The developed WRC/CNN architecture is suitable for high-accuracy, low-power AI on edge devices.