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Published on: February 1, 2022
High-Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High
Mengchuan Tian1, Xuefei Li1, Tiaoyang Li1
1Wuhan National High Magnetic Field Center and School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China.
Abstract:
Tunable bandgap can be induced in Bernal-stacked bilayer graphene by a perpendicularly electric displacement field. Here, we carry out a comprehensive study on the material synthesis of CVD Bernal-stacked bilayer graphene and devices for amplifying and mixing at high frequencies. The transistors show large output current density with excellent current saturation with high intrinsic voltage gain up to 77. Positive extrinsic forward power gain | S21|2 has been obtained up to 5.6 GHz as well as high conversion gain of -7 dB for the mixers. The conversion gain dependence on tunable on/off ratio of the transistors has also been discussed.
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