Study of closed-tube Cd diffusion in InSb for mid-IR detector-based applications

Area of Science:

• Materials Science
• Semiconductor Physics

Background:

• Indium antimonide (InSb) is a key semiconductor material for infrared detectors and high-speed electronics.
• Understanding impurity diffusion is crucial for controlling InSb material properties and device performance.

Purpose of the Study:

• To investigate the diffusion process of Cadmium (Cd) in indium antimonide (InSb) within a closed tube system.
• To develop and validate a mathematical model for predicting impurity concentration profiles.

Main Methods:

• Utilized Hall measurement technique to study Cadmium diffusion in InSb.
• Conducted experiments to establish a sustainable diffusion procedure.
• Employed an optimized interstitial-substitutional model for impurity profiling.

Main Results:

• The diffusion process of Cadmium in InSb was successfully studied.
• Experimental data showed good agreement with the developed mathematical models.
• The optimized interstitial-substitutional model accurately predicted impurity concentration profiles.

Conclusions:

• The developed mathematical models are reliable for simulating Cadmium diffusion in InSb.
• These models can be applied to numerical simulations of InSb-based devices, enhancing their design and performance.