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A C-Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application.

Solomon Amsalu Chekol1, Jongmyung Yoo1, Jaehyuk Park1

  • 1Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea.

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Researchers developed a new carbon-telluride (C-Te) ovonic threshold switching (OTS) selector device. This scalable device offers high performance, including fast speeds and thermal stability, for advanced memory applications.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Devices

Background:

  • Ovonic threshold switching (OTS) devices are crucial for memory applications.
  • Scaling down selector devices is essential for higher memory densities.
  • Achieving high thermal stability and low off-currents in OTS devices remains a challenge.

Purpose of the Study:

  • To demonstrate a novel, scalable binary OTS selector device based on carbon-telluride (C-Te).
  • To evaluate the performance characteristics of the new C-Te OTS selector.
  • To confirm the selector's functionality in a 1S-1R crossbar array configuration with resistive random-access memory (ReRAM).

Main Methods:

  • Fabrication of a C-Te based binary OTS selector device with a minimum feature size of ø30 nm.
  • Characterization of the device's electrical performance, including switching ratio, off-current, operating speed, endurance, and thermal stability.
  • Integration of the OTS selector with a ReRAM device to form a 1S-1R memory cell.
  • Evaluation of the 1S-1R device in a crossbar array to assess leakage current suppression and read-out margin.

Main Results:

  • The C-Te OTS selector demonstrated a high switching ratio (>10^5), low off-current (~1 nA), and fast operating speed (<10 ns).
  • The device exhibited excellent endurance (10^9) and high thermal stability (>450 °C), attributed to carbon's atomic size.
  • The integrated 1S-1R device successfully suppressed leakage current in half-selected cells.
  • An excellent read-out margin (>2^12 word lines) was achieved in fast read operations.

Conclusions:

  • The developed C-Te OTS selector is highly scalable and offers superior performance metrics.
  • The enhanced thermal stability is linked to the incorporation of carbon, preventing tellurium segregation.
  • The C-Te OTS selector is a viable component for high-density, high-performance memory arrays, particularly in 1S-1R ReRAM architectures.