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Antidamping-Torque-Induced Switching in Biaxial Antiferromagnetic Insulators
X Z Chen1, R Zarzuela2, J Zhang3
1Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
Physical Review Letters
|June 5, 2018
Summary
We demonstrate current-induced switching of Néel order in NiO/Pt heterostructures using spin Hall magnetoresistance. This electrical switching, driven by antidamping torque, offers new pathways for antiferromagnetic spintronics.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Antiferromagnetic spintronics offers potential for high-density data storage.
- Controlling antiferromagnetic order with electrical currents is crucial for device applications.
Purpose of the Study:
- To investigate current-induced switching of Néel order in NiO(001)/Pt heterostructures.
- To explore the mechanism of electrical manipulation of antiferromagnetic order.
Main Methods:
- Utilizing NiO(001)/Pt heterostructures.
- Measuring spin Hall magnetoresistance to detect Néel order switching.
- Analyzing current-induced antidamping and fieldlike torques.
Main Results:
- Observed significant reversible changes in longitudinal and transverse resistances at room temperature.
- Identified a current threshold of approximately 10^7 A/cm^2 for switching.
- Attributed switching to current-induced antidamping torque, aligning Néel order with the current.
Conclusions:
- Demonstrated all-electrical writing of Néel order in NiO/Pt.
- Highlighted the distinct switching mechanism compared to other antiferromagnets.
- Opened opportunities for advanced antiferromagnetic spintronic devices.
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