Related Experiment Video
Updated: Feb 9, 2026

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate
Published on: September 28, 2019
Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review
Abid Iqbal1, Faisal Mohd-Yasin2
1Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia. abid.iqbal@griffithuni.edu.au.
Abstract:
We summarize the recipes and describe the role of sputtering parameters in producing highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is collated from the analysis of around 80 journal articles that sputtered this film on variety of substrate materials, processes and equipment. This review will be a good starting point to catch up with the state-of-the-arts research on the reactive sputtering of AlN (002) thin film, as well as its evolving list of piezoelectric applications such as energy harvesters.
More Related Videos
Related Concept Videos
Review and Preview
Percentiles are a type of fractile that partition data into...
Review and Preview
Cross-reactivity
Reactivity of Enols
Reactivity of Enolate Ions
Radical Reactivity: Overview

