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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Electric-Field-Controlled Nonvolatile Magnetization Rotation and Magnetoresistance Effect in Co/Cu/Ni Spin Valves on
Wenbo Zhao1, Weichuan Huang1, Chuanchuan Liu1
1Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-coupled Quantum Matter Physics , University of Science and Technology of China , Hefei 230026 , China.
Abstract:
Electric-field control of magnetism is a key issue for the future development of low-power spintronic devices. By utilizing the opposite strain responses of the magnetic anisotropies in Co and Ni films, a Co/Cu/Ni/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) spin-valve/piezoelectric heterostructure with ∼7 nm Cu spacer layer was properly designed and fabricated. The purely electric-field-controlled nonvolatile and reversible magnetization rotations in the Co free layer were achieved, whereas the magnetization of the Ni fixed layer was almost unchanged. Accordingly, not only the electroresistance but also the electric-field-tuned magnetoresistance effects were obtained, and more importantly at least six nonvolatile magnetoresistance states in the strain-tuned spin valve were achieved by setting the PMN-PT into different nonvolatile piezo-strain states. These findings highlight potential strategies for designing electric-field-driven multistate spintronic devices.
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