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Light-Stimulated Synaptic Devices Utilizing Interfacial Effect of Organic Field-Effect Transistors
Shilei Dai1, Xiaohan Wu1, Dapeng Liu1
1Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Key Laboratory of Advanced Civil Engineering Materials, Ministry of Education , Tongji University , Shanghai 201804 , P. R. China.
ACS Applied Materials & Interfaces
|June 8, 2018
Summary
Researchers developed simple light-stimulated synaptic transistors using organic field-effect transistors (OFETs). These devices mimic brain synapses, showing memory and learning abilities for advanced neuromorphic computing.
Area of Science:
- Materials Science
- Neuroscience
- Electronics
Background:
- Light-stimulated synaptic devices offer advantages like high bandwidth and speed.
- Existing devices often need specialized semiconductors and complex designs.
Purpose of the Study:
- To create a simple and effective method for fabricating light-stimulated synaptic transistors.
- To utilize the interface charge trapping effect in organic field-effect transistors (OFETs) for synaptic functions.
Main Methods:
- Fabrication of synaptic transistors using the interface charge trapping effect in OFETs.
- Characterization of device performance, including synaptic behaviors and memory capabilities.
Main Results:
- Devices demonstrated high synapselike behaviors, including excitatory postsynaptic current (EPSC) and pair-pulse facilitation (PPF).
- The transistors exhibited memory and learning abilities.
- Synaptic behaviors were accurately modeled by mathematical equations, validating the approach.
Conclusions:
- The interface charge trapping effect in OFETs provides a reliable strategy for organic light-stimulated synapses.
- This work presents a simple fabrication method for light-stimulated synaptic transistors with memory and learning capabilities.
- The findings open new avenues for developing organic neuromorphic devices.
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