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Current crowding issues on nanoscale planar organic transistors for spintronic applications
Tindara Verduci1, Guillaume Chaumy1, Jean-Francois Dayen1
1University of Strasbourg, CNRS, IPCMS UMR 7504, 23 rue du Loess, F-67034 Strasbourg, France.
Nanotechnology
|June 13, 2018
Summary
Current crowding in organic electronics significantly impacts spin transport. This study reveals how it reduces magnetoresistance, affecting spin valve device applications and data interpretation.
Area of Science:
- Organic electronics
- Spintronics
- Condensed matter physics
Background:
- Interface resistance causes current crowding in short-channel organic devices.
- The effect of current crowding on spin transport remains uninvestigated.
Purpose of the Study:
- To investigate the impact of current crowding on spin transport in nanoscale organic devices.
- To analyze how current crowding affects magnetoresistance in spin valve devices.
Main Methods:
- Investigated electrochemically doped poly(2,5-bis(3,4-ethylenedioxy)thiophene) (PBTTT) short-channel devices.
- Measured crowding lengths for sub-100 nm electrode separations.
- Applied the Fert-Jaffrès model to account for current crowding in spin transport.
Main Results:
- Observed the smallest reported current crowding lengths in nanoscale PBTTT devices.
- Found that observed crowding lengths exceed reported spin diffusion lengths.
- Predicted significant reductions in magnetoresistance due to current crowding.
Conclusions:
- Current crowding is a critical factor influencing spin transport in organic electronics.
- The findings necessitate re-evaluating magnetoresistance measurements in spin valve devices.
- Understanding current crowding is essential for advancing organic spintronic applications.
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