Probing the local interface properties at a graphene-MoSe2 in-plane lateral heterostructure: an ab initio study
Everson S Souza1, Wanderlã L Scopel, Roberto H Miwa
1Departamento de Física, Universidade Federal do Espírito Santo, Vitória, ES 29075-910, Brazil. nosreveazuos@gmail.com wlscopel@gmail.com.
This study explores graphene-MoSe2 lateral heterostructures, revealing interface atomic structures influence electronic and magnetic properties. X-ray spectroscopy simulations identify unique interface features for advanced nanoelectronic and spintronic applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Surface Science
Background:
- Graphene-MoSe2 lateral heterostructures are promising for novel electronic devices.
- Understanding local interface properties is crucial for device performance.
Purpose of the Study:
- To theoretically investigate local interface properties in graphene-MoSe2 lateral heterostructures.
- To identify unique spectral signatures of interface atomic arrangements.
Main Methods:
- First-principles density functional theory (DFT) calculations.
- Simulations of X-ray Absorption Near-Edge Structure (XANES) spectroscopy at the C K-edge.
Main Results:
- Simulated XANES spectra show distinct features for interface carbon atoms compared to pristine graphene.
- Interface atomic structure dictates local electronic and magnetic properties.
- Metallic, semiconductor, or half-metallic characteristics were observed at the interface.
Conclusions:
- The study provides a method to identify interface structures in 2D lateral heterojunctions.
- Graphene-MoSe2 lateral heterojunctions exhibit tunable electronic and magnetic properties.
- These findings highlight the potential for 2D lateral heterojunctions in nanoelectronics and spintronics.
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