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Updated: Feb 8, 2026

Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies
Published on: December 18, 2015
Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures
B A Andreev1, K E Kudryavtsev2, A N Yablonskiy3
1Institute for Physics of Microstructures of RAS, 603950, Nizhny Novgorod, Russia. boris@ipmras.ru.
Abstract:
The observation of a stimulated emission at interband transitions in monocrystalline n-InN layers under optical pumping is reported. The spectral position of the stimulated emission changes over a range of 1.64 to 1.9 μm with variations of free electron concentration in InN layers from 2·1019 cm-3 to 3·1017 cm-3. The main necessary conditions for achieving the stimulated emission from epitaxial InN layers are defined. In the best quality samples, a threshold excitation power density is obtained to be as low as 400 W/cm2 at T = 8 K and the stimulated emission is observed up to 215 K. In this way, the feasibility of InN-based lasers as well as the potentials of crystalline indium nitride as a promising photonic material are demonstrated.
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