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Related Experiment Video

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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

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Published on: July 18, 2025

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers.

Nils von den Driesch¹, Daniela Stange¹, Denis Rainko¹

¹Peter Grünberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies (JARA-FIT) Forschungszentrum Jülich 52425 Jülich Germany.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)

|June 26, 2018

Summary

Advanced group IV semiconductor heterostructures, including multi-quantum wells (MQWs), show promise for efficient, complementary metal-oxide-semiconductor (CMOS)-compatible lasers. These GeSn/SiGeSn materials offer direct bandgap active layers for next-generation photonic devices.

Keywords:

GeSn SiGeSn heterostructures lasers multi‐quantum wells

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Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

Area of Science:

Materials Science
Semiconductor Physics
Optoelectronics

Background:

Group IV semiconductors are crucial for complementary metal-oxide-semiconductor (CMOS) technology.
Integrating photonic functionalities into CMOS platforms requires advanced material systems.
Heterostructures, particularly those involving Germanium-Tin (GeSn), are explored for direct bandgap properties.

Purpose of the Study:

To demonstrate the growth and characterization of advanced group IV semiconductor materials for CMOS-compatible photonics.
To investigate GeSn/SiGeSn heterostructures and multi-quantum wells (MQWs) for laser applications.
To analyze carrier confinement and quantization effects on material properties.

Main Methods:

Epitaxial growth of GeSn/SiGeSn double heterostructures and MQWs.
Advanced characterization techniques: atom probe tomography and dark-field electron holography.
Optical characterization: photoluminescence spectroscopy.
Theoretical calculations for band structure analysis.

Main Results:

Successful growth of complex GeSn/SiGeSn heterostructures with high material quality.
Extraction of critical composition and strain parameters influencing band structure.
Evaluation of carrier confinement and quantization effects via photoluminescence.
Demonstration of potential for efficient group IV lasers.

Conclusions:

MQW heterostructures exhibit the highest potential for next-generation CMOS-compatible group IV lasers.
The GeSn/SiGeSn material system is a viable candidate for integrated photonics.
Understanding carrier confinement is key to optimizing laser performance in these materials.