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Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Length measurement and spatial orientation reconstruction of single nanowires
G Prestopino1, A Orsini2, C Falconi3
1Dipartimento di Ingegneria Industriale, Università di Roma 'Tor Vergata,' Via del Politecnico 1, I-00133 Roma, Italy.
Abstract:
The accurate determination of the geometrical features of quasi one-dimensional nanostructures is mandatory for reducing errors and improving repeatability in the estimation of a number of geometry-dependent properties in nanotechnology. In this paper a method for the reconstruction of length and spatial orientation of single nanowires (NWs) is presented. Those quantities are calculated from a sequence of scanning electron microscope (SEM) images taken at different tilt angles using a simple 3D geometric model. The proposed method is evaluated on a collection of SEM images of single GaAs NWs. It is validated through the reconstruction of known geometric features of a standard reference calibration pattern. An overall uncertainty of about 1% in the estimated length of the NWs is achieved.
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