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Taeyoon Kim1,2, Jung Wook Lim1,2, Seong Hyun Lee1

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A novel nonvolatile memory device utilizes a deep trap interface floating gate, offering high performance and visible light-erasable capabilities. This tunneling oxide-free design enhances durability and reproducibility for advanced electronic applications.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Physics

Background:

  • Conventional nonvolatile memory devices often suffer from performance degradation due to frequent tunneling processes through tunneling oxides.
  • Developing memory devices with enhanced durability, high performance, and novel erasing mechanisms is crucial for next-generation electronics.

Purpose of the Study:

  • To propose and investigate a novel tunneling oxide-free nonvolatile memory device employing a deep trap interface floating gate.
  • To explore the potential of visible light for erasing memory states and improve device reproducibility.

Main Methods:

  • Fabrication of a nonvolatile memory device with a deep trap interface floating gate structure.
  • Characterization of the device's electrical properties, including on/off current ratio and memory window.
  • Investigation of visible light (400 nm) irradiation for state erasure.
  • Application of in situ H2 plasma treatment for shallow trap passivation.

Main Results:

  • The proposed device achieved a high on/off current ratio of 10^7 and a sizable memory window.
  • Visible light irradiation demonstrated complete restoration of the program state, indicating an effective erasing process.
  • In situ H2 plasma treatment significantly improved device reproducibility and retention characteristics during bake tests at 85 °C.

Conclusions:

  • The tunneling oxide-free deep trap interface floating gate memory device offers a promising alternative to conventional nonvolatile memories.
  • Visible light-erasable functionality and enhanced reproducibility make this device suitable for robust and efficient data storage applications.