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Visible-light Induced Reduction of Graphene Oxide Using Plasmonic Nanoparticle
Published on: September 22, 2015
Taeyoon Kim1,2, Jung Wook Lim1,2, Seong Hyun Lee1
1ICT Materials Research Group, Materials & Components Basic Research Division , Electronics and Telecommunications Research Institute (ETRI) , 218 Gajeong-ro , Yuseong-gu, Daejeon 305-700 , South Korea.
A novel nonvolatile memory device utilizes a deep trap interface floating gate, offering high performance and visible light-erasable capabilities. This tunneling oxide-free design enhances durability and reproducibility for advanced electronic applications.
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